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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -30 i d @ v gs = -12v, t c =100c continuous drain current -19 i dm pulsed drain current -120 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 332 mj i ar avalanche current -30 a e ar repetitive avalanche energy 20.8 mj dv/dt peak d iode recovery dv/dt -4.1 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dcconverters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 product summary part number radiation level r ds(on) i d irhms597260 100k rads (si) 0.103 ? -30a irhms593260 300k rads (si) 0.103 ? -30a for footnotes refer to the last page features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight radiation hardenedpower mosfet thru-hole (low-ohmic to-254aa) irhms597260 200v, p-channel low-ohmic to-254aa technology pd-94605e downloaded from: http:///
irhms597260 pr e-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -30 i sm pulse source current (body diode) -120 v sd diode forward voltage -5.0 v t j = 25c, i s = -30a, v gs = 0v t rr reverse recovery time 300 ns t j = 25c, i f = -30a, di/dt -100a/ s q rr reverse recovery charge 6.0 cv dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -200 v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.25 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.103 v gs = -12v, i d = -19a resistance v gs(th) gate threshold voltage -2.0 -4.0 v ds = v gs , i d = -1.0ma g fs forward transconductance 23 v ds > -15v, i ds = -19a i dss zero gate voltage drain current -10 v ds = -160v ,v gs =0v -25 v ds = -160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 180 v gs =-12v, i d = -30a q gs gate-to-source charge 75 nc v ds = -100v q gd gate-to-drain (miller) charge 50 t d (on) turn-on delay time 50 v dd = -100v, i d = -30a t r rise time 100 v gs =-12v, r g = 1.20 ? t d (off) turn-off delay time 190 t f fall time 175 l s + l d total inductance 4.0 c iss input capacitance 7170 v gs = 0v, v ds = -25v c oss output capacitance 920 p f f = 1.0mhz c rss reverse transfer capacitance 86 na nh ns a note: corresponding spice and saber models are available on international rectifier website. thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.6 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 typical socket mount ? s v v measured from drain lead (6mm /.25in.frompackage) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad downloaded from: http:///
www.irf.com 3 pre-irradiation irhms597260 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs = 0v @v gs = 5v @v gs =10v @v gs = 15v @v gs = 20v br 37.3 285 36.8 - 200 - 200 - 200 - 200 -75 i 59.9 345 32.7 - 200 - 200 - 200 - 50 au 82.3 357 28.5 - 200 - 200 - 200 - 35 -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds br i au table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300krads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 -200 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -160v, v gs =0v r ds(on) static drain-to-source 0.103 0.103 ? v gs = -12v, i d =-19a on-state resistance (to-3) v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -30a 1. part number irhms5972602. part number irhms593260 downloaded from: http:///
irhms597260 pr e-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -32a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v - 6.0v bottom -5.0v -5.0v 55 . 566 . 577 . 58 -v gs , gate-to-source voltage (v) 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -50v 20 s pulse width t j = 150c t j = 25c -30a downloaded from: http:///
www.irf.com 5 pre-irradiation irhms597260
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 2 04 06 08 01 0 01 2 0 q g total gate charge (nc) 0 4 8 12 16 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -160v v ds = -100v vds= -40v i d = -32a 0.5 1.5 2.5 3.5 4.5 5.5 6.5 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c -30a 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s downloaded from: http:///
irhms597260 pr e-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 %
+ - 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 - i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
www.irf.com 7 pre-irradiation irhms597260 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 0 200 400 600 800 e , single pulse avalanche energy (mj) as i d top bottom -13.4a -19a -30a starting t j , junction temperature (c) downloaded from: http:///
irhms597260 pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -50v, starting t j = 25c, l=0.73mh peak i l = -30a, v gs = -12v i sd -30a, di/dt -220a/ s, v dd -200v, t j 150c footnotes: case outline and dimensions low-omic to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2008 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not e s : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. downloaded from: http:///

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